PURPOSE: To provide a structure and a method for manufacture to easily obtain highly efficient optical coupling between optical elements different from each other in functions and performance on a semiconductor optical integrated element.
CONSTITUTION: A semiconductor optical integrated element obtained by forming a plurality of continuous bulk semiconductor layers 6 or quantum well structures 9 different in grown layer thickness or composition element region by element region and by integrating semiconductor optical elements different in performance on the same semiconductor substrate 1 using the difference in the layers' or wells' energy level. Manufacturing method for the semiconductor optical integrated element by the region selective growth technique using an insulating film patterning mask 5 formed on the semiconductor substrate. The quantum well structure is applied to plurality of elements to be integrated, which almost always gives optical coupling between the element. This forms two or more optical elements functionally different by one time of crystal growth, which heretofore integrated by a plurality of times of epitaxial growth.
SUZUKI MAKOTO
TAKAHASHI MAKOTO
TSUCHIYA TOMONOBU
UOMI KAZUHISA
TAKAI ATSUSHI
| JPH0262090A | 1990-03-01 | |||
| JPH04303982A | 1992-10-27 | |||
| JPH04100291A | 1992-04-02 |