Title:
半導体光センサ
Document Type and Number:
Japanese Patent JP4302751
Kind Code:
B2
Abstract:
A sensor includes a substrate provided with a circuit element forming region and a photodiode forming region, the substrate having a silicon substrate, an insulating layer on the silicon substrate, and a silicon layer on the insulating layer; a photodiode in the silicon layer; a circuit element in the silicon layer; a first interlayer insulating film formed over the silicon layer; a first light-shielding film on the first interlayer film and having an opening in the photodiode forming region; and a first inter-region light-shielding plug arranged between the two regions, for connecting the silicon substrate and the first light-shielding film.
Inventors:
Okihara Masao
Application Number:
JP2007089298A
Publication Date:
July 29, 2009
Filing Date:
March 29, 2007
Export Citation:
Assignee:
oki Semiconductor Co., Ltd.
oki Semiconductor Miyagi Co., Ltd.
oki Semiconductor Miyagi Co., Ltd.
International Classes:
H01L27/14; H01L31/10
Domestic Patent References:
| JP2003282850A | ||||
| JP2001267544A |
Attorney, Agent or Firm:
Koichi Suzuki