Title:
SEMICONDUCTOR OPTICAL SWITCH AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH0234822
Kind Code:
A
Abstract:
PURPOSE:To improve low-loss characteristics and to obtain a semiconductor optical switch which has no wavelength dependency by implanting carriers in a part of a waveguide layer through an area with relatively low resistance in a clad layer other than a high-resistance area with a voltage applied between 1st and 2nd electrodes. CONSTITUTION:The semiconductor optical switch is constituted in double heterostructure by sandwiching the waveguide layer 6 between a semiconductor substrate 2 of a 1st conduction type having a forbidden band larger than its forbidden band and the clad layer 8 of a 2nd conduction type from above and below. Consequently, the low-resistance area is formed at a part of the waveguide layer 6 by plasma effect. Then incident light is reflected totally at a boundary without depending upon its wavelength. Further, the entire surface of the waveguide 6 is a low-carrier layer sandwiched between the semiconductor substrate 2 which has high carrier density and clad layer 8 and then the loss is reduced. Consequently, optical switching is carried out at a high extinction ratio with reduced transmission loss.
Inventors:
KURIMA KAZUNORI
SEMURA SHIGERU
SEMURA SHIGERU
Application Number:
JP18523688A
Publication Date:
February 05, 1990
Filing Date:
July 25, 1988
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
G02B6/12; G02F1/313; H01L27/15; (IPC1-7): G02B6/12; G02F1/313; H01L27/15
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)
Next Patent: JPH0234823