Title:
SEMICONDUCTOR PHOTO-DETECTOR AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2003158288
Kind Code:
A
Abstract:
To provide a semiconductor photo-detector and its manufacturing method, in which the range of detectable wavelengths can be controlled by an electric field.
A semiconductor layer 2 which constitutes an irradiated part L and a photovoltaic current deriving layer 4 which constitutes a receiving part of electrons released from the semiconductor 2 are placed on a substrate with an insulation layer 3 therebetween. Light radiated upon the semiconductor layer 2 is detected as a field-emission current by application of a bias voltage from the layer 4 to the semiconductor layer 2.
Inventors:
KUMAGAI MASAMI
SAITO TADASHI
KOBAYASHI NAOKI
SAITO TADASHI
KOBAYASHI NAOKI
Application Number:
JP2001356695A
Publication Date:
May 30, 2003
Filing Date:
November 21, 2001
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L31/10; H01J1/304; H01J1/312; H01J1/34; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Tetsuya Mori