Title:
SEMICONDUCTOR PHOTO DETECTOR
Document Type and Number:
Japanese Patent JP2021106196
Kind Code:
A
Abstract:
To provide a semiconductor photo detector that has an improved spectral sensitivity characteristic in a near infrared wavelength band and suppresses generation of a dark current.SOLUTION: A semiconductor photo detector 1 comprises a semiconductor substrate 11 and a polysilicon layer 19. The semiconductor substrate 11 has principal surfaces 11a, 11b facing each other. The polysilicon layer 19 has principal surfaces 19a, 19b facing each other and the principal surface 19a is disposed on the semiconductor substrate 11 so as to face the principal surface 11a. The semiconductor substrate 11 includes regions R1, R2. The region R1 includes a portion of the principal surface 11a; a semiconductor region 13 is formed in the region R1. The region R2 includes another portion of the principal surface 11a; a semiconductor region 15 is formed in the region R2. The polysilicon layer is disposed on the portion of the principal surface 11a included in the region R1. In the polysilicon layer, a plurality of depressions 21 opened on the principal surface 19b is formed.SELECTED DRAWING: Figure 1
Inventors:
YAMAMOTO AKINAGA
KONDO TAKAHIRO
SONOBE HIRONORI
NAGANO TERUMASA
TSUCHIYA RYUTARO
KODA MORIHIRO
SUZUKI YOSHIYUKI
KONDO TAKAHIRO
SONOBE HIRONORI
NAGANO TERUMASA
TSUCHIYA RYUTARO
KODA MORIHIRO
SUZUKI YOSHIYUKI
Application Number:
JP2019236233A
Publication Date:
July 26, 2021
Filing Date:
December 26, 2019
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK
International Classes:
H01L31/107; G01J1/02; G01J1/42; H01L27/146
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Yoshiki Kuroki
Kenichi Shibayama