Title:
SEMICONDUCTOR PHOTO DETECTOR
Document Type and Number:
Japanese Patent JPS62179163
Kind Code:
A
Abstract:
PURPOSE:To increase the speed of response of a semiconductor photo detector by a method wherein an electric field or an artificial electric field is formed in an optical absorption layer of the detector in the depth direction thereof and a hole generated in the optical absorption layer by light is contemplated to be transferred onto the window layer side. CONSTITUTION:An energy band gap is narrow on the window 3 side and wide on the substrate 1 side, an an inclination occurs at the end (v) of a filled band. Holes (h) out of carriers [electrons (e) and holes (h)] generated inside an optical absorption layer 2 by the incidence of light are attracted onto the side of the window layer 3. In other words, the holes (h) in the optical absorption layer sense an artificial electric field directed toward the side of the window layer 3 of detector. Since the intensity of an electric field caused by a bias voltage given to electrodes 4 and 5 is large in a portion near to the window layer 3 of said optical absorption layer 2, the holes (h) can be made to arrive rapidly at the electrode 5 by the electric field. By this constitution, a time required for the holes to arrive at the electrode can be shortened, and thus it becomes possible to make the speed of response of the detector high.
Inventors:
KUWAZUKA HARUHIKO
WADA OSAMU
AISAKA FUKUNOBU
WADA OSAMU
AISAKA FUKUNOBU
Application Number:
JP1975186A
Publication Date:
August 06, 1987
Filing Date:
January 31, 1986
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L31/04; H01L31/10; (IPC1-7): H01L31/04; H01L31/10
Attorney, Agent or Firm:
Kugoro Tamamushi