Title:
半導体光触媒
Document Type and Number:
Japanese Patent JP6470189
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve the efficiency of a photocatalytic reaction with a simple structure.SOLUTION: A semiconductor photocatalyst has an n-type first semiconductor layer 101, and a second semiconductor layer 102 formed on the first semiconductor layer 101 in contact therewith. The semiconductor photocatalyst also has a first metal layer 103 formed, by Schottky joint, on the second semiconductor layer 102, and a second metal layer 104 formed, by ohmic joint, on the first semiconductor layer 101. The first semiconductor layer 101 and the second semiconductor layer may comprise a III-V group compound semiconductor. For example, the first semiconductor layer 101 may comprise n-type GaN and the second semiconductor layer 102 may comprise AlGaN.SELECTED DRAWING: Figure 1
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Inventors:
Swirl Yuya
Yoko Ono
Shigeo Ogawa
Takeshi Komatsu
Yoshitaka Taniho
Kazuhide Kumakura
Yoko Ono
Shigeo Ogawa
Takeshi Komatsu
Yoshitaka Taniho
Kazuhide Kumakura
Application Number:
JP2016000391A
Publication Date:
February 13, 2019
Filing Date:
January 05, 2016
Export Citation:
Assignee:
Nippon Telegraph and Telephone Corporation
International Classes:
B01J27/24; B01J35/02; B01J37/02; C01B3/04
Domestic Patent References:
| JP2015012058A | ||||
| JP2015050224A | ||||
| JP2006066556A | ||||
| JP2011136340A | ||||
| JP2005028225A |
Foreign References:
| WO2013031063A1 |
Attorney, Agent or Firm:
Shigeki Yamakawa
Yuzo Koike
Masaki Yamakawa
Yuzo Koike
Masaki Yamakawa
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