Title:
SEMICONDUCTOR PHOTOCATHODE AND PHOTOELECTRIC TUBE USING THE SAME
Document Type and Number:
Japanese Patent JP3954478
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor photocathode with high sensitivity in an infrared region and to provide a photoelectric tube using it.
SOLUTION: A semiconductor photocathode 1 has a p+ type semiconductor substrate 2 made of GaSb and a p- type light absorption layer 3 made of InAsSb. A p+ type hole block layer 4 with an energy band gap larger than the light absorption layer 3 and made of AlGaSb is formed between the semiconductor substrate 2 and the light absorption layer 3. A p- type hole block layer 5 made of AlGaSb is formed on the light absorption layer 3, and a p- type electron emission layer 6 made of GaSb is formed on the hole block layer 5. An n+ type contact layer 7 made of GaSb is formed on the electron emission layer 6, and pn junction is formed with the contact layer 7 and the electron emission layer 6.
Inventors:
Edamura Tadataka
Minoru Arakaki
Minoru Arakaki
Application Number:
JP2002322785A
Publication Date:
August 08, 2007
Filing Date:
November 06, 2002
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01J1/34; H01J29/38; H01J31/50; H01J40/06; H01J43/08; H01L29/12; (IPC1-7): H01J1/34; H01J40/06
Domestic Patent References:
| JP9320457A | ||||
| JP8153462A | ||||
| JP10190021A | ||||
| JP2000030604A | ||||
| JP5090301A | ||||
| JP2001144382A | ||||
| JP11297191A | ||||
| JP2001093407A | ||||
| JP51073378A | ||||
| JP62133633A |
Foreign References:
| US3932883 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Tatsuya Shioda
Shiro Terasaki