Title:
SEMICONDUCTOR PHOTODETECTOR AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3152907
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To increase a photosensitivity of a semiconductor element to increase adhesion by setting an incident angle of light against an insulating film having a specified refractive index and against a slant face so as to get a total internal reflection of light.
SOLUTION: In a lower part of an InP substrate 105, a V-shaped groove 113 with a nearly mirror side face 114 is formed, A silicon nitride film 101 as a mirror reflection film is formed in contact with the mirror face 114 of the V-shaped groove 113. Light incident from an end face of the InP substrate 105 is incident into the silicon nitride film 101 at an incident angle θ of 55°. The light incident at an incident angle θ of 55° is totally reflected and then is incident into a light detecting section, with no reduction in the quantity of emitted photons. When the incident angle θ is 40° or above, the silicon nitride film could be replaced with a silicon oxide film as a mirror reflection film. The silicon nitride film and the silicon oxide film have a lower refractive index relative to the InP substrate and have a good adhesion with the InP substrate.
Inventors:
Masanobu Kato
Ryozo Furukawa
Ryozo Furukawa
Application Number:
JP35158098A
Publication Date:
April 03, 2001
Filing Date:
December 10, 1998
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L31/10; G02B6/42; H01L21/306; H01L27/14; H01L31/0232; H01L31/0352; H01L31/105; (IPC1-7): H01L31/10; H01L27/14
Domestic Patent References:
| JP6244444A | ||||
| JP10223880A | ||||
| JP9307134A | ||||
| JP4360585A | ||||
| JP4336473A |
Attorney, Agent or Firm:
Kenji Ohnishi