Title:
半導体光検出素子
Document Type and Number:
Japanese Patent JP7090400
Kind Code:
B2
Abstract:
Provided a semiconductor light detection element including: a semiconductor portion having a front surface including a light reception region that receives incident light and photoelectrically converting the incident light incident on the light reception region; a metal portion provided on the front surface; and a carbon nanotube film provided on the light reception region and formed by depositing a plurality of carbon nanotubes. The carbon nanotube film extends over an upper surface of the metal portion from an upper surface of the light reception region.
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Inventors:
Kazuto Ofuji
Masashi Ito
Katsumi Shibayama
Akira Sakamoto
Masashi Ito
Katsumi Shibayama
Akira Sakamoto
Application Number:
JP2017044179A
Publication Date:
June 24, 2022
Filing Date:
March 08, 2017
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L31/10; B82Y20/00; C01B32/158; G01J1/02; H01L27/148
Domestic Patent References:
| JP2013098564A | ||||
| JP7038135A | ||||
| JP2010283328A | ||||
| JP2009060051A |
Foreign References:
| WO2009093698A1 | ||||
| US20140238477 | ||||
| WO2014133183A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Kenichi Shibayama
Shotaro Terazawa
Yoshiki Kuroki
Kenichi Shibayama
Shotaro Terazawa
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