To provide a semiconductor photoelectric cathode that is capable of improving its property.
When the light absorption layer 2 is thick, deterioration phenomenon in the time resolution appears, but when the thickness of the light resolution layer 2 is limited, those lower part of electric concentration in one electron group is cut out. Therefore the overlapping region of the neighboring electron concentration distribution is reduced, and by a shortened running time necessary for the passing of the electrons, the overlapping region by diffusion can also be limited, and further, the electric field intensity can be increased. With these synergistic actions, the time resolution of infrared rays can be drastically improved. In cases where the time resolution is 40 ps at the thickness of the light absorption layer being around the wavelength of the infrared rays, 1.3 μm, the time resolution will become 7.5 ps when the thickness of the light absorption layer is made 0.19 μm.
HIROHATA TORU
SUGA HIROBUMI
MORI KUNIYOSHI
| JPH08236015A | 1996-09-13 | |||
| JPH09213206A | 1997-08-15 | |||
| JP2000021296A | 2000-01-21 | |||
| JP2000011856A | 2000-01-14 |
| US3958143A | 1976-05-18 |