PURPOSE: To obtain an excellent photoelectric conversion efficiency by forming a V-shaped groove around a semiconductor photoreceptor on the surface, separating the photoreceptor, and reflecting the light incident on the V-shaped groove by a light reflecting layer to be guided into the photoreceptor surface. thereby sufficiently preventing a crosstalk.

CONSTITUTION: An HgCdTe layer 2 is formed to include a P-type impurity by a liquid-phase growing method on an insulating CdTe substrate 1, and an n-type region 3 of square shape is formed. A V-shaped groove 6 is formed by an ion beam milling method, an Au film is deposited or sputter accumulated on the inner surface of the groove 6, and then patterned to form a light reflecting layer 7. An ZnSn layer 8 is formed by a depositing method as an insulator layer, a contacting window is formed, and one electrode 9 made of In is formed. When the detected light L is incident from the substrate 1 side, electrons are generated by photoelectric conversion phenomenon in the layer 2, but the light incident toward the layer 7 is reflected thereat to propagate along the layer 2 to contribute to the generation of electrons (e) due to complete absorption.