To produce a semiconductor porcelain element having a temp. coefficient of resistant of 9%/°C, a specific resistance of ≤3.5 Ω.cm and a static withstand voltage of ≥50 V/mm, which is provided with a prime field consisting of, as a main component, barium titanate and semiconductor porcelain having a positive temp. coefficient of resistance, and electrodes which are formed on the prime field.
A thermistor element 1 having positive characteristic has a prime field 2 comprising semiconductor porcelain having a positive temp. coefficient of resistant. The prime field 2 is formed in a disk-like form and electrodes 3 and 4 are formed on both main surfaces of the prime field 2. In such thermistor element 1 having positive characteristics, as the semiconductor procelain constituting the prime field 2, a semiconductor porcelain containing, as a main component, barium titanate, having an average crystalline particle size of 7 to 12 μm and having Na-content of ≤70 ppm by weight ratio is used. Further, as the electrodes 3 and 4, In-Ga electrodes are used.
OKAMOTO TETSUKAZU
HIROTA TOSHIHARU
NAGAO YOSHITAKA
