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Patent Searching and Data


Title:
SEMICONDUCTOR PORCELAIN AND PRODUCTION THEREOF
Document Type and Number:
Japanese Patent JPH03218964
Kind Code:
A
Abstract:

PURPOSE: To improve the balance of the respective electric characteristics of a capacitor by forming the insulated layer of oxide contg. Bi, Cu and Cs to the grain boundary of a porcelain sintered body consisting of SrTiO3, BaTiO3, a valency controlling agent and a sintering adjuvant.

CONSTITUTION: 005-0.40 mol Nb2O5 and/or Y2O3 as a valency controlling agent and 0.10-0.40mol CuO and/or MnO2 as a sintering adjuvant are mixed with 100mol main component consisting of 97-80mol SrTiO3 and 3-20mol BaTiO3 and this mixture is sintered. In order to insulate the grain boundary layer of the obtained porcelain sintered body, the sintered body is coated with composition which incorporates a mixture obtained by mixing 20-98mol% Bi2O3, 1-30mol% CuO and 1-70mol% carbonate or oxide of Cs as a main raw material and thereafter roasted. Thereby the respective electric characteristics of a capacitor are improved with good balance. Grain boundary insulation type semiconductor porcelain is obtained which is especially good in both dielectric constant and degree of temp. change in electrostatic capacity.


Inventors:
KANDA OSAMU
Application Number:
JP1419290A
Publication Date:
September 26, 1991
Filing Date:
January 23, 1990
Export Citation:
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Assignee:
SUMITOMO METAL IND
International Classes:
C04B35/46; H01G4/12; (IPC1-7): C04B35/46; H01G4/12
Attorney, Agent or Firm:
Ryuji Inouchi