Title:
SEMICONDUCTOR POWER CONVERSION DEVICE
Document Type and Number:
Japanese Patent JP2016101065
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor power conversion device which can achieve downsizing while ensuring a creeping distance of a high potential terminal.SOLUTION: In a semiconductor power conversion device in which a plurality of discrete semiconductor elements are secured to a substrate, each of the semiconductor elements Se includes a heat radiation surface formed on one surface and a plurality of terminals G, C, E which project from lateral faces crossing the heat radiation surface and which are held by the substrate, and a high potential terminal C having higher potential to the other terminals out of the plurality of terminals is bent in an in-plane direction including at least the heat radiation surface.SELECTED DRAWING: Figure 1
Inventors:
TABATA TAKEAKI
Application Number:
JP2014238968A
Publication Date:
May 30, 2016
Filing Date:
November 26, 2014
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD
International Classes:
H02M7/48; H01L23/40; H01L25/07; H01L25/18; H02M7/483
Domestic Patent References:
| JPH05328742A | 1993-12-10 | |||
| JP2009238923A | 2009-10-15 | |||
| JP2000012742A | 2000-01-14 | |||
| JPS5532066U | 1980-03-01 | |||
| JPS59111047U | 1984-07-26 | |||
| JPS58180049A | 1983-10-21 | |||
| JPS57121190U | 1982-07-28 |
Attorney, Agent or Firm:
Ichi Hirose
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