PURPOSE: To increase the accuracy by reducing the output error potential by a method wherein the connection part between gauge resistors is formed of a metallic layer of a small resistance value in the titled device having four gauge resistors connected in bridge formed at the diaphragm part of a semiconductor plate.

CONSTITUTION: The metallic layer of Al, Al-Si, Mo, W, etc. having a small resistance value is used for the connection parts 5a and 5b between the gauge resistors which determine the output potential. Since said parts between said resistors which determine the output potential are thus formed of metallic layers, the generation of the error potential becoming a problem in parctical use is eliminated, and then the titled device of a good accuracy can be obtained.