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Patent Searching and Data


Title:
SEMICONDUCTOR PRESSURE DETECTOR
Document Type and Number:
Japanese Patent JP2001208627
Kind Code:
A
Abstract:

To provide a semiconductor pressure detector which minimize the transmission of stress due to temperature change in a mounting table or in an adhesive to a sensor chip.

This semiconductor pressure detector is made by airtightly fitting/fixing hermetic glass as a number for mounting a sensor chip into an opening part formed in an element body made of metal making up a pressure sensor, mounting a diaphragm on the element body so as to cover the opening part, thus forming a liquid-filled chamber between the diaphragm and the glass, and bonding the chip 40 in the chamber to the glass. A projecting part 13a is formed on the bonding surface of the glass 13 to the chip 40 to reduce the area of bonding, thus so as not to transmit as much as possible conducting stress due to temperature change in the mounting table or in the adhesive 41 to the chip.


Inventors:
Kurosawa, Mitsuo
Suzuki, Kazue
Kimura, Yuji
Application Number:
JP2000000015087
Publication Date:
August 03, 2001
Filing Date:
January 24, 2000
Export Citation:
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Assignee:
SAGINOMIYA SEISAKUSHO INC
International Classes:
G01L9/04; G01L9/00; G01L19/04; G01L9/04; G01L9/00; G01L19/04; (IPC1-7): G01L9/04; G01L19/04