Title:
SEMICONDUCTOR PRESSURE DETECTOR
Document Type and Number:
Japanese Patent JP3160796
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor pressure detector in which the influence of a residual strain on a silicon diaphragm is eliminated when a glass base is bonded to a metallic base with bonding glass, and the occurrence of insufficient bonding is eliminated, and further provide an intelligent differential pressure/pressure transmitter using the pressure detector.
CONSTITUTION: A semiconductor pressure detector is constituted of a silicon diaphragm 1 having a strain-sensitive element, a glass or ceramic base 2 bonded to the diaphragm 1, and a metallic base 4 bonded to the glass or ceramic base 2 with bonding glass 3. The coefficient of thermal expansion of the metallic base 4 at the distortion spot of the bonding glass 3 is adjusted to equal to or lower than that of the glass or ceramic base 2.
Inventors:
Hideo Suzuki
Ken Takahashi
Yukio Takahashi
Yoshimi Yamamoto
Kenichi Aoki
Tomoyuki Tobita
Ken Takahashi
Yukio Takahashi
Yoshimi Yamamoto
Kenichi Aoki
Tomoyuki Tobita
Application Number:
JP13123695A
Publication Date:
April 25, 2001
Filing Date:
May 30, 1995
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
G01L13/06; G01L9/00; G01L9/04; G01L19/00; (IPC1-7): G01L13/06; G01L9/04
Domestic Patent References:
| JP5723830A | ||||
| JP57186136A | ||||
| JP6109570A | ||||
| JP5256715A | ||||
| JP6258162A | ||||
| JP6461632A | ||||
| JP4186136U |
Attorney, Agent or Firm:
Tatsuyuki Unuma