Title:
SEMICONDUCTOR PRESSURE DETECTOR
Document Type and Number:
Japanese Patent JPH08178778
Kind Code:
A
Abstract:
PURPOSE: To obtain a semiconductor pressure detector, which can be manufactured at the low cost by the few number of manhours without using a spacer.
CONSTITUTION: On a stem upper surface 61, a stage 5 and semiconductor pressure sensor chips 3, which have the approximately same size as the stem upper surface 61, are mounted. Lead inserting holes 10 for inserting leads 7, are formed in the semiconductor pressure sensor chips 3 and the stage 5. Since the semiconductor pressure sensor chips 3 and the stage 5 have the size of the same degree as the stem upper surface 61, these parts serve the role of a spacer.
Inventors:
YAMAGUCHI YASUO
Application Number:
JP32582494A
Publication Date:
July 12, 1996
Filing Date:
December 27, 1994
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01L9/04; G01L9/00; G01L19/04; G01L23/24; (IPC1-7): G01L9/04
Attorney, Agent or Firm:
Soga Doteru (6 people outside)