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Patent Searching and Data


Title:
SEMICONDUCTOR PRESSURE SENSITIVE ELEMENT
Document Type and Number:
Japanese Patent JPH06102121
Kind Code:
A
Abstract:

PURPOSE: To prevent the deterioration of the airtightness due to the damage of a package and to detect the generation of the deterioration by putting a semiconductor element having pressure-sensitive function in a double container.

CONSTITUTION: A pressure-sensitive chip 1 wherein a pressure-sensitive gauge is formed on a diaphragm part is fixed on a glass pedestal 2 by electrostatic bonding and the glass pedestal 2 is soldered to a metal stem 4 by solder 3. The metal stem 4 is welded to a metal cap 5 to form an airtight container. The airtight sealing between the outside of an external container consisting of a metal pedestal 13 and a lid part 15 and the pressure guide hole 22 opened to the center shaft of the pedestal 2 is ensured by forming protruding parts 23, 24 to the contact surface of the lid part 15 bonded to a rubber plate 14 under pressure and a resin support 10. Further, for example, by providing a gas sensor like a diffusion resistor changed in resistance by the contact with conductive gas such as steam in the atmosphere on a semiconductor element, self-diagnostic function detecting the entrance of gas due to the deterioration of airtightness is ensured.


Inventors:
SAKAI TOSHIAKI
Application Number:
JP25029092A
Publication Date:
April 15, 1994
Filing Date:
September 21, 1992
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD
International Classes:
G01L9/04; G01L9/00; G01L19/00; G01L27/00; (IPC1-7): G01L9/04; G01L19/00; G01L27/00
Attorney, Agent or Firm:
Iwao Yamaguchi