To provide a semiconductor pressure sensor for high temperature measuring capable of detecting a pressure at high sensitivity with no effect from chemicals even if a gas or liquid whose pressure is to be detected contains the chemicals.
The semiconductor pressure sensor 10 for high temperature measuring is provided with a crystalline sapphire layer 13 on which a pressure- sensitive resistive element 14 is laminated 14, and a body part 11 wherein a bottom part and a hollow part are formed from a titanium alloy as one body, with a notch part 11c provided to the bottom part, and the crystalline sapphire layer 13 is bonded inside. The crystalline sapphire layer 13 works as a pressure- receiving part to detect a pressure applied on the outside of the pressure- receiving part.
AOI HIDEKATSU
JPS5039951B1 | 1975-12-20 | |||
JP2001033332A | 2001-02-09 | |||
JPH08233676A | 1996-09-13 | |||
JPS633234A | 1988-01-08 | |||
JPS6391531A | 1988-04-22 | |||
JPH05182708A | 1993-07-23 |
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