Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR PRESSURE SENSOR FOR HIGH TEMPERATURE MEASURING
Document Type and Number:
Japanese Patent JP2002257659
Kind Code:
A
Abstract:

To provide a semiconductor pressure sensor for high temperature measuring capable of detecting a pressure at high sensitivity with no effect from chemicals even if a gas or liquid whose pressure is to be detected contains the chemicals.

The semiconductor pressure sensor 10 for high temperature measuring is provided with a crystalline sapphire layer 13 on which a pressure- sensitive resistive element 14 is laminated 14, and a body part 11 wherein a bottom part and a hollow part are formed from a titanium alloy as one body, with a notch part 11c provided to the bottom part, and the crystalline sapphire layer 13 is bonded inside. The crystalline sapphire layer 13 works as a pressure- receiving part to detect a pressure applied on the outside of the pressure- receiving part.


Inventors:
SHINOHARA YASUHIDE
AOI HIDEKATSU
Application Number:
JP2001051893A
Publication Date:
September 11, 2002
Filing Date:
February 27, 2001
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MINEBEA CO LTD
International Classes:
G01L9/04; G01L9/00; H01L29/84; (IPC1-7): G01L9/04; H01L29/84
Domestic Patent References:
JPS5039951B11975-12-20
JP2001033332A2001-02-09
JPH08233676A1996-09-13
JPS633234A1988-01-08
JPS6391531A1988-04-22
JPH05182708A1993-07-23
Attorney, Agent or Firm:
Hiroo Suzuki