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Patent Searching and Data


Title:
SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JP08233670
Kind Code:
A
Abstract:

PURPOSE: To stably detect pressure of a corrosive and high temperature pressure measuring object medium by filling a pressure transmitting flow medium in an airtight space surrounded by a case, and slidably installing a pressure transmitting part in a pressure introducing port to be measured.

CONSTITUTION: A detecting element part 10 is formed by joining a silicon substrate 1 having a diaphragm part 11 deformed by pressure to be measured and an insulating board 2 where an electrode part 31 is formed on a surface opposed to the diaphragm part 11 by electrostatic coupling. The whole element part 10 is adhered to a lower inner wall surface of a lower side case 5 by an adhesive 90, and the upper and lower cases 4 and 5 are joined together by ultrasonic welding or the like, and a pressure transmitting medium 7 is filled in an airtight space 70. A pressure transmitting slidingly movable member 6 is installed in a pressure introducing port 41 of the case 4, and prevents the medium 7 from leaking to a measuring object side medium 12. Pressure of the medium 12 applies pressure to a member 6, and this pressure is transmitted to the medium 7, and the diaphragm 11 of the substrate 1 of the element 10 is deformed by this pressure, and capacitance of the element 10 is changed.


Inventors:
Nemoto, Michio
Application Number:
JP1995000061675
Publication Date:
September 13, 1996
Filing Date:
February 24, 1995
Export Citation:
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Assignee:
TOKIN CORP
International Classes:
G01L9/12; G01L19/00; G01L9/12; G01L19/00; (IPC1-7): G01L9/12; G01L19/00