Title:
SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
Japanese Patent JP3131374
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a differential pressure type semiconductor sensor of thin type.
SOLUTION: On the side surface of a body 2 to which a sensor chip 1 containing a pressure reception diaphragm 10a is jointed, first and second insertion openings 15 and 16 which are formed together with the body 2 in a body and are projected in the lateral direction, are provided. At the part bridging from the first insertion opening 15 from a recessed place 10b, a first pressure introduction hole 5 which allows the recessed place 10b to communicate with the outside of a case comprising the body 2 and a cap 3 is provided, and, at the part bridging from the second insertion opening 16 to a pressure reference chamber 20 above the diaphragm 10a, a second pressure introduction hole 6 which allows the pressure reference chamber 20 to communicate with the outside of the case is provided.
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| JPH0926371 | SEMICONDUCTOR TYPE PRESSURE SENSOR |
Inventors:
Tomohiro Inoue
Shigenari Takami
Hiroshi Saito
Shigenari Takami
Hiroshi Saito
Application Number:
JP3797796A
Publication Date:
January 31, 2001
Filing Date:
February 26, 1996
Export Citation:
Assignee:
MATSUSHITA ELECTRIC WORKS,LTD.
International Classes:
G01L9/04; G01L9/00; G01L13/06; G01L19/00; (IPC1-7): G01L13/06; G01L9/04
Domestic Patent References:
| JP4130238A | ||||
| JP8226861A | ||||
| JP5188082A | ||||
| JP6461641A | ||||
| JP63145141U | ||||
| JP6363735U |
Attorney, Agent or Firm:
Keisei Nishikawa (1 person outside)
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