PURPOSE: To reduce the manufacture cost by using borosilicate glass which has a ≤500°C glass transition temperature and a specific mean coefficient of thermal expansion up to its sticking temperature as a base where a sensitive pellet is supported fixedly.

CONSTITUTION: A semiconductor pressure transducer has a thin diaphragm surface 2 which senses pressure in the center of a semiconductor crystal plate 1 mode of, for example, silicon, and a diffused resistance layer 3 of the conduction type opposite to the substrate 1 is formed on one side of the diaphragm surface and used as a strain inducing resistance gauge. Then, borosilicate glass which has a ≤500°C glass transition temperature and a (32W36)×10-7/°C means coefficient of thermal expansion up to its sticking temperature is used for the base 6 which supports the sensitive pellet constituted as above. Consequently, electrodes of said sensitive pellet is wired by aluminum and the manufacture is facilitated and reduced in cost.