PURPOSE: To reduce hysteresis and thermal hysteresis, by connecting piezoresistive elements to connecting terminal electrodes, which are formed on a thick part, through conductive layers, which are formed in a semiconductor single crystal substrate, and forming a passivation film so that only the parts on the connecting terminal electrode parts are thicker than the other part.

CONSTITUTION: Piezoresistive elements 12 are formed on a semiconductor single crystal substrate 11 having a thin diaphragm part 11B. The piezoresistive elements 12 are connected to connecting terminal electrodes 15, which are formed on a thick part 11A of the semiconductor single crystal substrate 11, through cnductive layers 13, which are formed on the semiconductor single crystal substrate 11. A passivation film 14, which covers the semiconductor single crystal substrate 11, is formed so that the parts for the connecting terminal electrode parts 14a are thicker than the other part. Thus, the area of the electrode is reduced and the passivation film becomes thin. Therefore, a micro- slip between the electrode and the passivation film or between the passivation film and the semiconductor single crystal substrate is minimized. Hysteresis and thermal hysteresis are reduced.