Title:
SEMICONDUCTOR PROBE WITH HIGH-RESOLUTION RESISTIVE TIP, AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2007071867
Kind Code:
A
Abstract:
To provide a semiconductor probe equipped with a high-resolution resistive tip, and to provide a method for manufacturing the same.
The semiconductor probe with the high-resolution resistive tip includes a cantilever in which a first impurity is doped and at the end of which a projecting resistive convex section is formed by doping second impurity, having the polarity differing from that of the first impurity at a low-concentration level; and first and second electrode regions, which are disposed on the both sides of the resistive convex section of the cantilever and in which the second impurity is doped to a high-concentration level.
Inventors:
JUNG JU-HWAN
KIM JUN-SOO
SHIN HYUNG-CHEOL
HONG SEUNG-BUM
KIM JUN-SOO
SHIN HYUNG-CHEOL
HONG SEUNG-BUM
Application Number:
JP2006204978A
Publication Date:
March 22, 2007
Filing Date:
July 27, 2006
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
SEOUL NAT UNIV IND FOUNDATION
SEOUL NAT UNIV IND FOUNDATION
International Classes:
G01Q60/00; G01Q70/16; G01Q80/00; G01R1/067; G01R1/073; G11B9/14
Attorney, Agent or Firm:
Masatake Shiga
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro
Takashi Watanabe
Yasuhiko Murayama
Shinya Mitsuhiro