To shorten required time for dry-cleaning by removing a reaction product deposited on the whole area of chamber inner wall by dry-cleaning, for suppressing generation of dust, relating to a semiconductor processing equipment performing plasma generation by an ECR phenomenon.
A plasma chamber 10 for plasma generation caused by an ECR phenomenon (ion source), a microwave guide 12 far introducing microwave into the plasma chamber, a magnetic coil 13 provided outside of the plasma chamber, a reaction chamber 14 which contains a semiconductor wafer 1 acting as a treatment target and ranges to a plasma outlet chamber of the plasma chamber, a sample table 17, provided in the reaction chamber, on which the semiconductor wafer is placed, and a high frequency power source 23 for applying RF bias to the side wall of the reaction chamber, are provided.
| JPS63133617 | PLASMA PROCESSING DEVICE |
| JP2779997 | PLASMA TREATMENT DEVICE |
| JPS5421258 | SEPARATION METHOD FOR SEMICONDUCTOR ELEMENT |
SHIMIZU TOSHIO
FURUYAMA MITSUTOSHI
KUBOTA TAKESHI
