Title:
SEMICONDUCTOR PROCESSING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE SAME
Document Type and Number:
Japanese Patent JPH0758051
Kind Code:
A
Abstract:
PURPOSE: To obtain a semiconductor deposition/oxidation method for processing a large quantity of semiconductor wafer using a single-furnace cycle. CONSTITUTION: After the temperature and a mixture gas in a furnace are stabilized, a dopant is introduced at a relative low temperature. Subsequently, the temperature in the furnace is raised steeply, in order to diffuse the dopant into a wafer under an inert atmosphere. Subsequently, the temperature is raised again and oxygen is introduced in order to form an oxide layer. Finally, the wafer is taken out form the furnace and the residual dopant in the chamber is neutralized effectively by introducing a strong oxygen flow.
Inventors:
JIYON EE GUUIN
Application Number:
JP15884894A
Publication Date:
March 03, 1995
Filing Date:
July 11, 1994
Export Citation:
Assignee:
SONY ELECTRONICS INC
International Classes:
B01L1/00; C30B31/06; H01L21/225; H01L21/31; (IPC1-7): H01L21/225; B01L1/00; H01L21/31
Attorney, Agent or Firm:
Hidekuma Matsukuma
Next Patent: 内燃機関の電子制御燃料噴射装置