To provide a semiconductor protecting device 1 capable of reducing the possibility that a surge voltage becomes excessive owing to resonance by an LC equivalent circuit 49 formed between a surge protecting circuit 7 and a capacitor element 9.
The semiconductor protecting device 1 is equipped with a surge protecting circuit 7 which clamps the surge voltage by a DMOS transistor 13 and a capacitor element 9 connected to the surge protecting circuit 7 in parallel. Then the surge protecting circuit 7 and capacitor element 9 are incorporated in an IC 3, which is molded with IC molding resin 11. Consequently, a wire connecting the surge protecting circuit 7 and capacitor element 9 becomes short, so an inductance component L of the LC equivalent circuit 49 becomes small. Consequently, the resonance frequency f0 of the LC equivalent circuit 49 can be fixed at a high frequency, so that the probability that the surge voltage becomes excessive owing to resonance is reducible.
COPYRIGHT: (C)2006,JPO&NCIPI
Susumu Ueda
Hiroshi Toyoda
| JP10313095A | ||||
| JP4243157A | ||||
| JP2000058666A |