Title:
SEMICONDUCTOR QUANTUM DOT ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3304903
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To realize a highly efficient quantum dot device which reflects narrow state density of quantum dot by forming a semiconductor quantum dot structure with highly uniform size distribution.
SOLUTION: InAs dot formed by using strain relaxation on a GaAs layer is buried in a GaAs film 4 to a thickness not more than a thickness of dot thickness. InGaAs is formed to a layer t fill a hole formed by removing the dot by thermal etching. A surface is thereby flat and an InGaAs quantum dot 5 of uniform thickness is formed in a hole part at high density by forming InGaAs to a layer at least to a depth of a hole. A quantum dot laser which oscillates at a low threshold value current, for example, is realized by preparing a quantum dot device by using the quantum dot 5.
Inventors:
Hideaki Saito
Application Number:
JP36328198A
Publication Date:
July 22, 2002
Filing Date:
December 21, 1998
Export Citation:
Assignee:
NEC
International Classes:
H01L29/06; H01L29/201; H01L29/80; H01S5/00; H01S5/343; (IPC1-7): H01S5/343; H01L29/06; H01L29/201; H01L29/80
Domestic Patent References:
| JP6242481A | ||||
| JP4180283A | ||||
| JP7202164A | ||||
| JP1012975A | ||||
| JP8236501A | ||||
| JP10289996A | ||||
| JP1187687A |
Attorney, Agent or Firm:
Naoki Kyomoto (2 outside)
Previous Patent: COMPOUND HIGH FREQUENCY PARTS AND MOBILE COMMUNICATION EQUIPMENT USING THE SAME
Next Patent: OBJECT FOLLOWING UP/RECOGNIZING DEVICE
Next Patent: OBJECT FOLLOWING UP/RECOGNIZING DEVICE