To provide a semiconductor radiation detector that uses a surface-barrier type or pn junction type InSb single crystal, which has small leakage current at a temperature of 10K or higher, has few electron or hole trappings, and has large amount of charge formation.
The semiconductor radiation detector which uses a high-purity InSb single crystal with no impurities doped artificially as a detection medium of radiation and having a surface-barrier-type electrode, formed using an Au/Pd alloy to obtain diode characteristics, is manufactured. Based on a characteristics test, it is verified that the semiconductor radiation detector is obtained, which has diode characteristics at 4.2K of an element resistance as large as 1.4kΩ, the rise time of the output signal of a charge sensitive preamplifier being as short as 0.4μs, and few electron or hole trappings. In addition, the detector can measure an α-ray spectrum in the temperature range of 2K to 50K.
NAKAMURA TATSUYA
JINNO IKUO
SUGIURA OSAMU
Tadashi Masui
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shurin Sakurai