Title:
化合物半導体InSb単結晶を用いた半導体放射線検出器
Document Type and Number:
Japanese Patent JP4131934
Kind Code:
B2
Abstract:
A high-purity InSb single crystal not artificially doped with impurities is used as a radiation detecting medium. In order to obtain diode characteristics, a Au.Pd alloy is used to form a surface barrier layer. At 4.2 K, the device resistance of the thus fabricated solid-state radiation detector was as large as 1.4 kOmega and the rise time of output signals from a charge-sensitive preamplifier was as short as 0.4 mus, indicating reduced trapping of electrons or positive holes. The detector was also capable of measuring alpha-ray spectra over the temperature range from 2 K to 50 K.
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Inventors:
Masaki Katagiri
Tatsuya Nakamura
Ikuo Kamino
Osamu Sugiura
Tatsuya Nakamura
Ikuo Kamino
Osamu Sugiura
Application Number:
JP2003017310A
Publication Date:
August 13, 2008
Filing Date:
January 27, 2003
Export Citation:
Assignee:
Japan Atomic Energy Agency
International Classes:
G01J1/02; H01L31/0264; G01T1/24; H01J40/14; H01L31/00
Domestic Patent References:
| JP55030837A |
Other References:
Review of Scientific Instruments,Vol.73,No.7,pp.2533-2536(2002)
応用物理学会学術講演会講演予稿集,Vol.63rd,No.1,Page.81(2002)
応用物理学会学術講演会講演予稿集,Vol.63rd,No.1,Page.81(2002)
Attorney, Agent or Firm:
Kazuo Shamoto
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shurin Sakurai
Fujihiro Kanda
Hideo Tanaka
Shinya Hosokawa
Norihiro Fukasawa
Koji Hirayama
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Shurin Sakurai
Fujihiro Kanda
Hideo Tanaka
Shinya Hosokawa
Norihiro Fukasawa
Koji Hirayama