Title:
SEMICONDUCTOR RELAY CIRCUIT
Document Type and Number:
Japanese Patent JP3395168
Kind Code:
B2
Abstract:
PURPOSE: To reduce a turn-on and turn-off switching time.
CONSTITUTION: When an LED 4 is stimulated, a voltage is generated from a photovoltaic diode array 5 and fed to a gate of an output MOSFET3, and since a lateral PNP transistor(TR) 7 acts like a photovoltaic diode, a turn-on time of the MOSFET8 is reduced. Moreover, when the LED4 is not stimulated, the lateral PNP TR 7 acts like a conventional TR to progress the discharge a charge in a gate of the MOSFET8, then the turn-off time of the MOSFET8 is reduced.
Inventors:
Hidetoshi Matsumoto
Keiji Owatari
Ooka Taneji
Keiji Owatari
Ooka Taneji
Application Number:
JP6743292A
Publication Date:
April 07, 2003
Filing Date:
March 25, 1992
Export Citation:
Assignee:
Omron Corporation
International Classes:
H01L31/10; H01L31/12; H03K17/04; H03K17/56; H03K17/567; H03K17/78; (IPC1-7): H03K17/78; H01L31/10; H01L31/12; H03K17/04; H03K17/567
Domestic Patent References:
| JP6288423A |
Attorney, Agent or Firm:
Shigenori Wada