Title:
SEMICONDUCTOR RING LASER
Document Type and Number:
Japanese Patent JP2002118324
Kind Code:
A
Abstract:
To enable an operation of a semiconductor ring laser by reducing the radius of a ring and to enable an easy control of the laser in a single lateral mode.
The semiconductor ring laser comprises an active region formed as the embedding active region 1 of a linear embedding hetero structure or a ridge waveguide structure. Reliability of the laser can be assured. The waveguides 4 and 5 for forming the ring have a semiconductor high mesa waveguides having very strong light confinement of a lateral direction. Accordingly, even when a bending radius is reduced, a radiating loss does not almost occur. Thus, even when the radius of the ring is reduced, the ring laser can be operated.
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Inventors:
ONO TETSUICHIRO
YOSHIKUNI YUZO
ISHII HIROYUKI
TAKEUCHI HIROAKI
ITO HIROSHI
ISHIBASHI TADAO
HIROTA YUKIHIRO
YOSHIKUNI YUZO
ISHII HIROYUKI
TAKEUCHI HIROAKI
ITO HIROSHI
ISHIBASHI TADAO
HIROTA YUKIHIRO
Application Number:
JP2000308906A
Publication Date:
April 19, 2002
Filing Date:
October 10, 2000
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01S5/10; H01S5/065; H01S5/50; (IPC1-7): H01S5/10; H01S5/065; H01S5/50
Attorney, Agent or Firm:
Toshiro Mitsuishi (2 outside)