Title:
SEMICONDUCTOR SENSOR-DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2018124275
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To reduce size of a semiconductor pressure sensor and furthermore to increase pressure detection sensitivity.SOLUTION: A deep groove is formed in a thickness direction of a semiconductor substrate. Making a part of the groove airtight and application of pressure to a groove adjacent to the airtight groove cause a barrier wall (corresponding to a diaphragm) between the grooves to bend, thereby, capacity of an airtight space or a groove part changes. Detection of an amount of the change enables pressure to be detected., The capacity increases by deepening the groove, thereby a sensor having smaller area can be created. Furthermore, an amount of deformation in the barrier wall can be increased by thinning the barrier wall, thereby sensor sensitivity is improved.SELECTED DRAWING: Figure 13
Inventors:
HOSAKA SHUN
Application Number:
JP2018007756A
Publication Date:
August 09, 2018
Filing Date:
January 21, 2018
Export Citation:
Assignee:
HOSAKA SHUN
International Classes:
G01L9/12; F04B43/02; F04B43/04; G01L9/00; G01L9/08; G01P15/08; G01P15/125; G01P15/18; H01L29/84; H01L41/047; H01L41/09; H01L41/113; H01L41/18; H01L41/187; H01L41/193; H01L41/22; H04R17/02