Title:
SEMICONDUCTOR SENSOR AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP3629185
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor sensor and its manufacturing method capable of reducing the cost, having strong mechanical strength, and capable of making high-precision measurement.
SOLUTION: In Fig. 2 (a), an impurity diffusion area 2 is formed as a lower electrode on the surface of a Si substrate, then a plurality of trenches are formed in the impurity diffusion area 2 by a dry etching method. In Fig. 2 (b), the Si substrate 1 is annealed in a high-temperature state so that the surface is not oxidized. When annealing is applied, Si flows to minimize the surface area, and a cavity section 6 is formed in the Si substrate 1. In Fig. 2 (c), a high-concentration impurity diffusion area 7 is formed as an upper electrode on a diaphragm section 10. In Fig. 2 (d), an insulating layer 8 is formed on the surface of the Si substrate 1, and metal wiring 9 is formed. Since a plurality of trenches are formed in the impurity diffusion area 2 and annealing is applied, a pressure reference chamber and the diaphragm section can be simultaneously formed.
Inventors:
Hiroyasu
Keiji Hanzawa
Junichi Horie
Keiji Hanzawa
Junichi Horie
Application Number:
JP2000180123A
Publication Date:
March 16, 2005
Filing Date:
June 15, 2000
Export Citation:
Assignee:
株式会社日立製作所
株式会社日立カーエンジニアリング
株式会社日立カーエンジニアリング
International Classes:
G01F1/692; G01L9/00; G01L9/04; G01L9/12; G01P15/125; H01L29/84; (IPC1-7): G01L9/04; G01F1/692; G01L9/12; G01P15/125; H01L29/84
Domestic Patent References:
| JP2000002610A | ||||
| JP5256871A | ||||
| JP10311750A | ||||
| JP11284204A | ||||
| JP9145507A | ||||
| JP2238647A |
Attorney, Agent or Firm:
Kasuga Toshiaki