PURPOSE: To nearly match the central thick part of a first substrate to the center of a plumb bob by forming a first substrate and a machining mark used for separating a second substrate on the second surface of the second substrate after joining the second substrate.
CONSTITUTION: The area of a glass layer 5 in contact with a central thick part 14 is made larger than that of the central thick part and the area of the glass layer 5 in contact with a peripheral thick part 15 is made smaller than the peripheral thick part 15, thus joining first and second substrates 1 and 2. Then, a groove part 7 is formed by etching the silicon of the second surface of the second substrate 2 and the outer periphery of the groove part 7 is used as a machining mark for determining a line (dicing line) for separating a plumb bob 22 and a support 21. The outer periphery of the groove part 7 is matched to a dicing blade and a wafer is moved by 100μm and is subjected to separation machining at that position. The dicing line is provided at a position overlapping with the peripheral thick part 15 of the first substrate 1 and the move of the plumb bob 22 is limited by the peripheral thick part, thus easily matching the center of the plumb bob 22 to the center of the central thick part 14.
| WO/2022/170441 | QUANTUM TUNNELING ORGANIC COMPOSITES |
| WO/1999/034186 | HIGH TEMPERATURE RESONANT INTEGRATED MICROSTRUCTURE SENSOR |
OKAZAKI MITSUHIRO
SUZUKI YOSHIHIKO
IWASAKI JUN
