Title:
SEMICONDUCTOR SENSOR
Document Type and Number:
Japanese Patent JPH0720148
Kind Code:
A
Abstract:
PURPOSE: To eliminate the influence of stray capacitance by detecting the displacement of an electrode movable depending on an object to be detected using a MOS transistor in which the movable electrode acts as a gate electrode.
CONSTITUTION: The semiconductor acceleration sensor comprises an electrode 102 movable depending on the acceleration, MOS transistors 106, 107, 108, 109, 110, 111, 112, 113 in which the movable gate electrode 102 acts as a gate electrode and the ON resistance thereof varies according to the displacement of the movable electrode 102, and an electronic circuit 114. Since the influence of stray capacitance can be eliminated, the size and the cost of semiconductor sensor can be reduced.
Inventors:
MATSUMOTO MASAHIRO
SUZUKI KIYOMITSU
MIKI MASAYUKI
KURAGAKI SATOSHI
KASAYAMA TAKAO
SUZUKI MASAYOSHI
SUZUKI KIYOMITSU
MIKI MASAYUKI
KURAGAKI SATOSHI
KASAYAMA TAKAO
SUZUKI MASAYOSHI
Application Number:
JP16715293A
Publication Date:
January 24, 1995
Filing Date:
July 06, 1993
Export Citation:
Assignee:
HITACHI LTD
International Classes:
G01D5/24; G01P15/12; (IPC1-7): G01P15/12; G01D5/24
Attorney, Agent or Firm:
Yukihiko Takada
Next Patent: ACCELERATION SENSOR AND FABRICATION THEREOF