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Title:
SEMICONDUCTOR SI SUBSTRATE AND MANUFACTURE OF THE SAME
Document Type and Number:
Japanese Patent JPH06326044
Kind Code:
A
Abstract:

PURPOSE: To obtain a semiconductor Si substrate, in which the generation of warpage and mechanical deterioration are reduced, by changing an Si single crystal grown by setting a mean temperature-rise rate so as to satisfy the specific relationship of the mean temperature-rise rate between specific temperatures and a single-crystal pull-up rate into a wafer in a Czochralski method.

CONSTITUTION: A mean temperature-rise rate between 800-1000°C is set in V1 °C/min] a pull-up rate V2 [mm/min] at the time of the pull-up of an Si single crystal by a Czochralski method. The mean temperature-rise rate between 800-1000°C and the pull-up rate V2 [mm/min] of the Si single crystal are selected and set so as to satisfy the following formula V2≥2×V21+V1+39, and the grown Si single crystal is changed into a wafer. That is, oxygen atoms of 5x1010 or more contained in an oxygen deposit are formed from the Si single crystal, and the density of the oxygen deposit reaches 2×108/cm3 or less.


Inventors:
Honma, Yoshinori
Tomita, Mitsuhiro
Yamazaki, Hideyuki
Amai, Tsutomu
Application Number:
JP1994000015340
Publication Date:
November 25, 1994
Filing Date:
February 09, 1994
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
C30B15/20; C30B29/06; H01L21/02; H01L21/208; H01L21/322; (IPC1-7): H01L21/208; C30B15/20; C30B29/06; H01L21/02
Attorney, Agent or Firm:
須山 佐一



 
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