Title:
半導体固体電池
Document Type and Number:
Japanese Patent JP7010843
Kind Code:
B2
Abstract:
A semiconductor solid state battery has an insulating layer provided between an N-type semiconductor and a P-type semiconductor. The first insulating layer preferably has a thickness of 3 nm to 30 μm and a dielectric constant of 10 or less. The first insulating layer preferably has a density of 60% or more of a bulk body. The semiconductor layer preferably has a capture level introduced. The semiconductor solid state battery can eliminate leakage of an electrolyte solution.
Inventors:
Atsuya Sasaki
Ryoto Sasaki
Yoshinori Kataoka
Hirabayashi Hideaki
Shuichi Saito
Ryoto Sasaki
Yoshinori Kataoka
Hirabayashi Hideaki
Shuichi Saito
Application Number:
JP2018558077A
Publication Date:
January 26, 2022
Filing Date:
December 21, 2017
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Materials Co., Ltd.
Toshiba Materials Co., Ltd.
International Classes:
H01L49/00
Domestic Patent References:
| JP2016014128A | ||||
| JP2015195335A | ||||
| JP2017182969A |
Foreign References:
| WO2012046325A1 | ||||
| US20130224596 | ||||
| EP2626909A1 | ||||
| US20150270329 | ||||
| EP2924798A1 | ||||
| WO2013179471A1 |
Attorney, Agent or Firm:
Masatoshi Kurata
Nobuhisa Nogawa
Naoki Kono
Tadashi Inoue
Shigeru Iino
Sanae Kaneko
Nobuhisa Nogawa
Naoki Kono
Tadashi Inoue
Shigeru Iino
Sanae Kaneko
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