Title:
SEMICONDUCTOR STORAGE CIRCUIT
Document Type and Number:
Japanese Patent JPS5246736
Kind Code:
A
Abstract:
PURPOSE: Transmission FET is provided between output of voltage division circuit and output lineof memory cell as well as FET which charges the capacity of output circuit between power source terminal and output line is provided respectively. In this way, FAMOS storage circuit of high-speed operation is obtained without any mis-memorization.
Inventors:
FUKUDA MINORU
Application Number:
JP12181775A
Publication Date:
April 13, 1977
Filing Date:
October 11, 1975
Export Citation:
Assignee:
HITACHI LTD
International Classes:
G11C17/00; G11C16/04; G11C16/06; (IPC1-7): G11C17/00