To suppress burr-like thin wall sections due to the retreated front end section of a cylindrical member constituting the storage electrode of a capacitance element and, at the same time, to prevent the capacitance decrease of the member due to the reduced height of the member by forming the cylindrical member toward a semiconductor substrate from the side face of a plate member.

A semiconductor storage device is provided with N-type impurity diffusion areas 4-1 and 4-2 formed on the surface of a semiconductor substrate 1 and a capacitance element having an electrode provided in interlayer insulating films 13, 15, and 16 on the substrate 1 and connected to the diffusion layer 4-2 in a state where the electrode fills up a contact hole. The electrode has a plug-like member 8a-l which fills up the contact hole and is protruded from the surface of an interlayer insulating film 6, a plate member 8a-2 which is coupled with the front end of the plug-like member 8a-1, and a cylindrical member 10b which is coupled with the side face of the platy member 8a-2 and extended toward the insulating film 6. Therefore, the formation of burr-like thin sections due to the retreated front end section of the cylindrical member 10b can be suppressed.