Title:
SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3213442
Kind Code:
B2
Abstract:
PURPOSE: To prevent the degradation in the soft error resistance of stacked capacitor type DRAM cells, that in the characteristics of access transistors, and that in the quality of capacitor dielectric films.
CONSTITUTION: The lower electrode of a capacitor 32 is constituted of two layer polysilicone films 41 and 42. Arsenic, having a relatively small diffusion constant, is ion-implanted in the lower polysilicone film 41 in contact with a diffusion layer 21 to prevent the junction therewith from being thickened. Phosphorus is diffused in the upper polysilicone film 42 to be in contact with an ONO film 27, the capacitor dielectric film, to prevent the quality of the ONO film 27 from being degraded.
Inventors:
Yuugo Tomioka
Application Number:
JP15280493A
Publication Date:
October 02, 2001
Filing Date:
May 31, 1993
Export Citation:
Assignee:
Nippon Steel Corporation
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/108; H01L21/822; H01L21/8242; H01L27/04
Domestic Patent References:
| JP5275617A |
Attorney, Agent or Firm:
Koetsu Kokubun