Title:
SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2016062950
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor storage device and a manufacturing method of the same.SOLUTION: A semiconductor storage device 1 comprises: laminates 15 in each of which a first insulation film 14, a first electrode film 13, a second insulation film 14 and a second electrode film 13 are laminated in this order, and on an end of the lamination, and an end of the first electrode film 13 extends outward from an area just below the second electrode film 13; semiconductor pillars SP which pierce the first electrode films 13 and the second electrode films 13; memory films 28 capable of storing charge, which are provided between the first electrode film 13 and the semiconductor pillar SP and between the second electrode film 13 and the semiconductor pillar SP, respectively; interlayer insulation films 33 each provided on an end of the laminate 15; and contacts 35 which pierce the interlayer insulation film 33 to be connected to ends of the first electrode films 13. A first part of the first electrode film 13, which is connected to the contact 35, is formed by metal or metal nitride. A second part of the first electrode film 13, which surrounds the memory film 28, contains silicon.SELECTED DRAWING: Figure 1
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Inventors:
UENAKA TSUNEO
KATSUMATA RYUTA
KATSUMATA RYUTA
Application Number:
JP2014187501A
Publication Date:
April 25, 2016
Filing Date:
September 16, 2014
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/8247; H01L21/336; H01L21/768; H01L23/522; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Masahiko Hinataji