Title:
SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM USING THE SAME
Document Type and Number:
Japanese Patent JP2000040035
Kind Code:
A
Abstract:
To provide a memory system which relieves a system and also controls the reduction of memory capacity.
Respective SLDRAM(sink link dynamic random access memory) 5.0 to 5.n execute a test of an internal memory part in accordance with an execution command that is given from a memory controller 3 and give a defective address to the controller 3. The controller 3 stores the respective defective address of the SLDRAM 5.0 on 5.n and accesses only normal addresses without accessing the defective addresses. The decreasing rate of the memory capacity of a main memory 4 can be suppressed compared with the conventional practice in which an SLDRAM having defective addresses is not accessed.
Inventors:
Watanabe, Naoya
Morooka, Kiichi
Morooka, Kiichi
Application Number:
JP1998000209514
Publication Date:
February 08, 2000
Filing Date:
July 24, 1998
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G06F12/16; G11C11/407; G11C29/00; G11C29/04; G11C29/14; G11C29/44; (IPC1-7): G06F12/16; G11C29/00
