To provide a semiconductor storage device capable of improving the efficiency of processing of the entire system.
A semiconductor storage device relating to this invention includes a memory cell array 13, a memory controller 11, and a refresh control circuit 12. The memory controller 11 generates a refresh request signal corresponding to timing for executing refresh in such a manner that timing for executing refresh of the number of times corresponding to a most significant row address 44 of a use area of the memory cell array 13 is scattered within a predetermined refresh period. The refresh control circuit 12 generates a refresh address 34 for executing refresh of the memory cell array 13 until the refresh address 34 coincides with the most significant row address 44 every timing for supplying the refresh request signal 33 generated by the memory controller 11.
WO/2004/001762 | SEMICONDUCTOR MEMORY |
JPS5870488 | MEMORY CIRCUIT |
JP2001093278A | 2001-04-06 | |||
JPH08147970A | 1996-06-07 | |||
JPH09320263A | 1997-12-12 | |||
JPH01290193A | 1989-11-22 |