Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2019057642
Kind Code:
A
Abstract:
To improve reliability.SOLUTION: According to the embodiment, a semiconductor storage device is laminated above a semiconductor substrate and includes: a plurality of first electrode parts WLcomb having comb shapes to which one end parts of a plurality of first word lines WLfinger are commonly connected; a plurality of lead-out parts 32 which are connected to a plurality of second surfaces of the plurality of first electrode parts WLcomb respectively and are laminated so as to form a step shape; a plurality of first memory cells MC; and a decoder 22. The plurality of lead-out parts 32 include a plurality of contact region parts 33 respectively. A contact region part 33-9 of a lead-out part 32-9 on a top layer is not arranged in an end part area in the second surface, and a contact region part 33-0 of a lowermost layer lead-out part 32-0 is arranged in an end part area of the second surface.SELECTED DRAWING: Figure 7
Inventors:
SONEHARA TAKASHI
KODAMA ERIKA
NAKAMURA NORITAKA
INABA TSUNEO
NAKAYAMA KOICHI
KODAMA ERIKA
NAKAMURA NORITAKA
INABA TSUNEO
NAKAYAMA KOICHI
Application Number:
JP2017181545A
Publication Date:
April 11, 2019
Filing Date:
September 21, 2017
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L21/8239; H01L21/336; H01L27/105; H01L27/11575; H01L27/11582; H01L29/788; H01L29/792; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken