Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2022052081
Kind Code:
A
Abstract:
To suppress a malfunction of a memory cell.SOLUTION: A semiconductor storage device comprises: a laminate including wiring layers and insulation layers alternately laminated in a first direction; a semiconductor layer including a first region superposed on the insulation layer in a second direction crossing the first direction and a second region superposed on the wiring layer in the second direction; an insulation region provided between the wiring layer and the second region; and a memory region provided on the opposite side of the wiring layer of the second region. The wiring layer is more separated than the insulation layer from the first region in the second direction. The second region includes a portion provided between a plurality of insulation layers in the first direction and protruding toward the wiring layer more than from the first region in the second direction. A surface on the opposite side of the second region of the memory region is closer to the wiring layer than the first region in the second direction.SELECTED DRAWING: Figure 1
Inventors:
KAMATA YOSHIKI
MOROTA MISAKO
NOMURA YUKIHIRO
ASAO YOSHIAKI
MOROTA MISAKO
NOMURA YUKIHIRO
ASAO YOSHIAKI
Application Number:
JP2020158255A
Publication Date:
April 04, 2022
Filing Date:
September 23, 2020
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L21/8239; G11C13/00; H01L27/11597; H01L29/786; H01L45/00
Attorney, Agent or Firm:
Patent Business Corporation Sakura International Patent Office