Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2022144361
Kind Code:
A
Abstract:
To provide a semiconductor storage device capable of selectively erasing data.SOLUTION: A semiconductor storage device 2 comprises a memory cell array 110 which stores data, and a sequencer 41 which controls an operation of the memory cell array 110. The sequencer 41 sets an electrical potential of a selection word line sWL connected to a gate of a selection memory cell transistor to Vm1, sets an electric potential of an adjacent word line nWL connected to a gate of an adjacent memory cell transistor to Vm2 higher than Vm1, and sets an electric potential of a non-selection word line uWL connected to a gate of a non-selection memory cell transistor to Vm3 higher than Vm2.SELECTED DRAWING: Figure 6
Inventors:
MAEDA TAKASHI
Application Number:
JP2021045328A
Publication Date:
October 03, 2022
Filing Date:
March 19, 2021
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
G11C16/08; G11C16/04; G11C16/14
Attorney, Agent or Firm:
Tohru Kamada
Takuma Tsuda
Kenro Murai
Takuma Tsuda
Kenro Murai