Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2022181756
Kind Code:
A
Abstract:
To provide a semiconductor storage device capable of achieving lower power and higher integration.SOLUTION: A non-volatile semiconductor memory 100 includes a memory cell array 110 in which a NOR-type array 110A having a NOR-type flash memory structure and a resistance random access array 110B having a resistance random access memory structure are formed on a substrate. An entry gate 110C is formed between the NOR-type array 110A and the resistance random access array 110B. When the NOR-type array 110A is accessed, the entry gate 110 disconnects the resistance random access array 110B from the NOR-type array 110A.SELECTED DRAWING: Figure 1
Inventors:
YANO MASARU
Application Number:
JP2021088893A
Publication Date:
December 08, 2022
Filing Date:
May 27, 2021
Export Citation:
Assignee:
WINBOND ELECTRONICS CORP
International Classes:
H01L21/8239; G11C11/00; G11C16/04; H01L21/336; H01L27/11568; H01L45/00; H01L49/00
Domestic Patent References:
| JP2012038393A | 2012-02-23 | |||
| JP2006295130A | 2006-10-26 | |||
| JP2019024082A | 2019-02-14 | |||
| JP2005268621A | 2005-09-29 |
Attorney, Agent or Firm:
Kyozo Katayose
Previous Patent: JPWO2022181755
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